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| MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM75TX-HB * * * * * IC Collector current .......................... 75A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, UPS, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 68 8 10.5 B1 B3 B5 (P)+ 20 14 0 62.5 -0.2 740.25 20 14 86 B2 U B6 B4 V (N)- W 11-M4 (10) 18.5 18.5 18.5 18.5 (10) 4-5.40.1 10 800.25 94 P (+) B1 24.8 26 B3 U B5 V B6 N (-) W LABEL 7 4 2 28.2 B2 13 13 B4 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 75 75 350 4.5 750 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M4 2500 0.98~1.47 10~15 1.47~1.96 15~20 0.98~1.47 10~15 520 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 B(E) terminal screw M4 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V, Collector open IC=75A, IB=100mA IC=-75A (diode forward voltage) IC=75A, VCE=2.5V Min. -- -- -- -- -- -- 750 -- VCC=300V, IC=75A, IB1=150mA, -IB2=1.5A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 150 2.5 3.0 1.8 -- 2.0 8.0 3.0 0.35 1.3 0.2 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C COLLECTOR CURRENT IC (A) DC CURRENT GAIN hFE 160 10 4 7 5 4 3 2 10 3 7 5 4 3 2 VCE=5.0V 2 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) IB=200mA 120 IB=100mA 80 IB=50mA IB=20mA VCE=2.5V 40 IB=10mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 0 0 1 2 3 4 5 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 2.0 2.4 2.8 3.2 3.6 VBE (V) 4.0 VCE=2.5V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 101 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A) VBE(sat) VCE(sat) SATURATION VOLTAGE IB=100mA Tj=25C Tj=125C 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 Tj=25C Tj=125C SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 1 VCC=300V 7 IB1=150mA 5 IB2=-1.5A 4 3 2 ts 10 0 7 5 tf 4 3 ton 2 Tj=25C Tj=125C 10-1 10 0 2 3 4 5 7 10 1 3 IC=75A IC=50A IC=30A 2 1 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 BASE CURRENT IB (A) SWITCHING TIME ton, ts, tf (s) 2 3 4 5 7 10 2 IC (A) COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10-1 10 0 2 3 45 7 tf 160 VCC=300V IB1=150mA IC=75A ts REVERSE BIAS SAFE OPERATING AREA COLLECTOR CURRENT IC (A) ts, tf (s) 140 120 100 80 60 40 20 Tj=125C SWITCHING TIME IB2=-2.0A IB2=-3.5A Tj=25C Tj=125C 10 1 2 3 45 7 10 2 0 0 100 200 300 400 500 600 700 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 90 100s tw=50s DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA D 10 C 5 1m 00 s s m s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) CASE TEMPERATURE TC (C) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 710 1 2 3 5 7 10 2 0.5 0.4 Zth (j-c) (C/ W) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.3 0.2 0.1 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM75TX-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 800 700 600 500 400 300 200 100 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 Tj=25C Tj=125C Irr Qrr 10 1 10 2 Irr (A), Qrr (c) 10 1 7 5 3 2 10 0 10 0 7 trr 5 VCC=300V 3 IB1=150mA 2 IB2=-1.5A 10 -1 10 -1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 710 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 trr (s) |
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